2024 post COVID-19

(1) Book chapters

(2) Original Papers

• B-Doped Fullerene as a Potential Metal-Free Catalyst Material for CO Reduction Reaction
  Arikasuci Fitonna Ridassepri, Yutaro Umejima, and Jun Nakamura
  J. Phys. Chem. C 128, 9513-9519 (2024); DOI: 10.1021/acs.jpcc.4c01468 (IF=3.7)
• A Functional N/S doped-Carbon Electrode from a Carbonized Bagasse Activated with Water Vapor
  Fitria Rahmawati, Ainaya Febi Amalia, Arikasuci Fitonna Ridassepri, Jun Nakamura, Younki Lee
  J. Electrochem. Sci. Technol 13, 466-475 (2024); DOI: 10.33961/jecst.2024.00017 (IF=3.7)
• First-principles study on edge-edge interactions of bilayer zigzag SiC nanoribbons
  Jawahir Ali Sharifi, Rongyao Sun, and J. Nakamura
  Jpn.J.Appl.Phys. 63, 055001 (1-7), (2024); DOI: 10.35848/1347-4065/ad3d4e (IF=1.5)

(3) International Conference

• Simulation for the in-plane surface dipole moment distribution of the Si surface using DFT calculations(2B-3)
  32nd International Colloquium on Scanning Probe Microsopy (ICSPM-32), Nov.18, 2024 (Sapporo, Japan)
  A.Sumiyoshi, K.Yamasue, Y.Cho, and J.Nakamura
  
• Visualization of the Surface Dipole Moment at the Si(111) Surfaces Using First-Principles Calculations(2P11)
  The 10th International Symposium on Surface Science (ISSS-10), Oct.21, 2024 (Kita-kyushu, Japan)
  A.Sumiyoshi, K.Yamasue, Y.Cho, and J.Nakamura
  
• Role of Computational Simulations in Materials Science and Atomic-Level Materials Design (invited)
  Chulalongkorn PPC Seminar, Oct.18, 2024 (Bangkok, Thailand)
  J.Nakamura
  
• Structure and stability of the Se-treated GaAs(001) surface(TH-PS-55)
  23rd International Conference on Molecular Beam Epitaxy (ICMBE-23), Sep.12, 2024 (Matsue, Japan)
  A.Ohtake, T.Mano, D.Nakagawa, and J.Nakamura
  
• Electronic and optical properties of graphane(O11B.07)
  34th International Conference on Diamond and Carbon Materials (ICDCM-34), Sep.4, 2024 (Dresden, Germany)
  D.Nakagawa, T.Hazama, and J.Nakamura
  
• Designing the properties and functions of materials at an atomic level (invited)
  2024 China-Japan Seminar on Science and Technology, Aug.2, 2024 Hohhot, China)
  J.Nakamura
  

(4) Domestic Conference

• (see domestic page)

(5) Review

(6) Awards

(7) Press release

2023 post COVID-19

(1) Book chapters

(2) Original Papers

• Atomic structure of the Se-passivated GaAs(001) surface revisited
  A.Ohtake, T.Suga, S.Goto, D.Nakagawa, and J. Nakamura
  Scientific Reports 13,  18140 (2023); 10.1038/s41598-023-45142-y (IF=4.6)
• Hydrogen storage on tin carbide monolayers with transition metal adatoms
  L.G. Arellano, A.L. Marcos-Viquez, F. De Santiago, A. Miranda, L.A. Perez, F. Salazar, J. Nakamura, and M. Cruz-Irisson
  Int. J. Hydrogen Energy (2023), published online; DOI: 10.1016/j.ijhydene.2023.04.127 (IF=7.139)
• Theoretical prediction of two-dimensional II-V compounds
  Lucia G. Arellano, Takayuki Suga, Taichi Hazama, Taichi Takashima, Miguel Cruz-Irisson, and Jun Nakamura
  Physical Review Materials 7, 014006 (2023); DOI=10.1103/PhysRevMaterials.7.014006 (IF=3.980)

(3) International Conference

• A simulation for the in-plane distribution of the surface dipole moment using DFT calculations (S7-2)
  31st International Colloquium on Scanning Probe Microscopy (ICSPM31), Dec.8, 2023 (Tokyo, Japan)
  A.Sumiyoshi, K.Yamasue, Y.Cho, and J.Nakamura
  
• Edge-Driven Electronic Properties in Bilayer Zigzag SiC Nanoribbons: A First-Principles Study (S4-60)
  31st International Colloquium on Scanning Probe Microscopy (ICSPM31), Dec.7, 2023 (Tokyo, Japan)
  J.A.Sharifi, R.Sun, and J.Nakamura
  
• B-doped fullerene: a high-performance electrocatalyst for the CO reduction reaction (S4-53)
  31st International Colloquium on Scanning Probe Microscopy (ICSPM31), Dec.7, 2023 (Tokyo, Japan)
  A.F.Ridassepri, Y.Umejima, and J.Nakamura
  
• Visualization of the Local Dipole Moment at the Si(111)-(2x2) Surface Using DFT Calculations (SS+AS+TF-MoA-4)
  AVS 69th International Symposium & Exibition (AVS69), Nov.6, 2023 (Portland, USA)
  A. Sumiyoshi, K. Yamasue, Y. Cho, and J. Nakamura
  
• Hydrogen storage on tin carbide monolayers with transition metal adatoms (Wed-PP-37)
  T36th European Conference on Surface Science (ECOSS36), Aug.30, 2023 (Lodz, Poland)
  L. G. Arellano, J. Rebollo, F. Salazar, A. Trejo, and J. Nakamura
  
• Structural stability and electronic states of AA and AB stacked II-V compounds (Wed-15:20-O-2DM)
  T36th European Conference on Surface Science (ECOSS36), Aug.30, 2023 (Lodz, Poland)
  Lucia Guadalupe Arellano Sartorius and Jun Nakamura
  
• Effects of doping and vacancies in the electronic properties of the SiC monolayer: A DFT approach (MS23-1071-A)
  The 11th Asia Conference on Mechanical and Materials Engineering (ACMME2023), Jun.9, 2023 (Sapporo, Japan)
  Lucia Guadalupe Arellano Sartorius, Ranferi Cancino, Francisco De Santiago, Álvaro Miranda, and Jun Nakamura
  

(4) Domestic Conference

• (see domestic page)

(5) Review

(6) Awards

• A.Sumiyoshi, AVS Dorothy M. and Earl S. Hoffman Travel Grant (Oct.2023)

(7) Press release

2022 with COVID-19

(1) Book chapters

(2) Original Papers

• Size optimization of N-doped graphene nanocluster for oxygen reduction reaction
  Haruyuki Matsuyama and Jun Nakamura
  ACS Omega 7, 3093-3098 (2022); DOI=10.1021/acsomega.1c06509 (IF=3.512)
• Tunable electronic properties of silicon nanowires assodium-battery anodes
  L. G. Arellano Sartorius, F. Salazar, A. Miranda, A. Trejo-Baños, L. A. Pérez, M. Cruz-Irisson, and Jun Nakamura
  International Journal of Energy Research 46, 17151-17162, (2022): DOI: 10.1002/er.8378 (IF=5.164)

(3) International Conference

• Structural stability of 2D II-V compounds (TF-WeE-8)
  Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2022), Dec.14, 2022 (Hawaii, USA)
  Lucia Guadalupe Arellano Sartorius, Takayuki Suga, Taichi Hazama, Taichi Takashima, Miguel Cruz-Irisson, and Jun Nakamura
• Size Dependence of the N-Doped Graphene Nanocluster on the Oxygen Reduction Reaction Activity (Thu-E2-2)
  Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2022), Dec.13, 2022 (Hawaii, USA)
  Haruyuki Matsuyama, Lucia Guadalupe Arellano Sartorius, and Jun Nakamura
• B-doped Fullerene as A Novel Monoatomic Catalyst Material for CO Reduction Reaction (Thu-E2-2)
  The 22nd International Vacuum Congress (IVC-22), Sep.15, 2022 (Sapporo, Japan)
  Arikasuci Fitonna Ridassepri, Yutaro Umejima, and Jun Nakamura
• Effects of substrates on Oxygen Reduction Reaction of Nitrogen-doped Graphene (Thu-J1-2)
  The 22nd International Vacuum Congress (IVC-22), Sep.15, 2022 (Sapporo, Japan)
  Taichi Takashima and Jun Nakamura
  
• Effects of Spin-Orbit Interaction on Mn Atomic Wire on GaAs(110) (PO1C-9)
  The 22nd International Vacuum Congress (IVC-22), Sep.14, 2022 (Sapporo, Japan)
  Motoi Hirayama and Jun Nakamura
  
• Theoretical prediction of novel two-dimensional II-V compounds (PO1B-18)
  The 22nd International Vacuum Congress (IVC-22), Sep.14, 2022 (Sapporo, Japan)
  Lucia Guadalupe Arellano Sartorius, Takayuki Suga, Miguel Cruz Irisson, and Jun Nakamura
  
• First-principles Study on Edge-edge Interactions of Bilayer Zigzag SiC Nanoribbons (Mon-J2-5)
  The 22nd International Vacuum Congress (IVC-22), Sep.12, 2022 (Sapporo, Japan)
  Jawahir Ali Sharifi, Sun Rongyao, and Jun Nakamura
  
• Thermodynamical Stability of 2D sp2/sp3 N-doped Carbon Materials (Mon-G1-6)
  The 22nd International Vacuum Congress (IVC-22), Sep.12, 2022 (Sapporo, Japan)
  Taichi Hazama and Jun Nakamura
  
• Hydrogen storage on li-decorated b-doped silicon carbide monolayer (22)
  International conference on Advanced Nanomaterials (ANM) 2022, Jul. 27, 2022 (Portugal, online)
  Lucia G. Arellano Sartorius, Alma L. Marcos-Viquez, Luis A. Pérez, Jun Nakamura, and Miguel Cruz Irisson
  
• Tin carbide monolayers decorated with transition metal atoms for hydrogen storage (20)
  International conference on Advanced Nanomaterials (ANM) 2022, Jul. 27, 2022 (Portugal, online)
  Lucia G. Arellano Sartorius, Alma L. Marcos-Viquez, Luis A. Pérez, Jun Nakamura, and Miguel Cruz Irisson
  

(4) Domestic Conference

(5) Awards

(6) Press release

2021 with COVID-19

(1) Book chapters

(2) Original Papers

• Pyrolysis-Free Oxygen Reduction Reaction (ORR) Electrocatalysts Composed of Unimolecular Layer Metal Azaphthalocyanines Adsorbed onto Carbon Materials
  Hiroshi Yabu, Koki Nakamura, Yasutaka Matsuo, Yutaro Umejima, Haruyuki Matsuyama, Jun Nakamura, and Koju Ito
  ACS Appl. Energy Mat.4, 14380-14389 (2021); DOI=10.1021/acsaem.1c03054 (IF=6.024); Adopted as cover art
• Ab initio study of hydrogen storage on metal-decorated GeC monolayers
  Lucia Guadalupe Arellano, Francisco De Santiago, Álvaro Miranda, Luis Antonio Pérez, Fernando Salazar, Alejandro Trejo, Jun Nakamura, and Miguel Cruz-Irisson
  Int.J. Hydrogen Energy 46, 29261-29271 (2021); DOI=10.1016/j.ijhydene.2021.04.135 (IF=7.139)

(3) International Conference

• Carbonaceous material derived from bagasse-waste as anode for Li-ion batteries(online poster) A1-089
  The 2nd ECTI Workshop on BEC and the 3rd ASEAN-UEC Workshop, Dec.10, 2021 (online)
  Arikasuci Fitonna Ridassepri, Fitria Rahmawati, Agung Tri Wijayanta, and Jun Nakamura
  
• Stacking effect on oxygen reduction reaction of nitrogen-doped graphene(online poster) 30PS-23
  The 9th International Symposium on Surface Science (ISSS-9), Nov.30, 2021 (online)
  Taichi Takashima and Jun Nakamura
  
• Structural stability of II-V compound ultrathin films(online oral) 30aC-3
  The 9th International Symposium on Surface Science (ISSS-9), Nov.30, 2021 (online)
  Lucia G. Arellano Sartorius , Takayuki Suga, Miguel Cruz-Irisson, and Jun Nakamura
  
• Derivatization Effect of Cobalt Phthalocyanine on the Catalytic Activity for Carbon Monoxide Reduction(HC-On Demand-3)
  AVS 67th International Symposium & Exhibition, Oct.25, 2021 (online)
  Y. Umejima and J.Nakamura
  
• Almacenamiento de hidrógeno en GeC bidimensional decorado con metales de transición(HC-On Demand-3)
  LXIV Congreso Nacional de Física. Tijuana, Baja California, Mexico, 4-8 October 2021 (online)
  Lucia G. Arellano, Francisco De Santiago, Álvaro Miranda, María Isabel Iturrios, Luis A. Pérez, Jun Nakamura, and Miguel Cruz-Irisson
  
• Theoretical study of Li-decorated B-doped silicon carbide monolayer for hydrogen storage(P3)
  12th International Conference on Hydrogen Production (ICH2P-2021), Sep.19, 2021 (online)
  Lucia G. Arellano Sartorius , Miguel Cruz-Irisson, and Jun Nakamura
  

(4) Domestic Conference

(5) Awards

(6) Press release

• see Japanese page

2020 with COVID-19

(1) International Conference

• Stacking effect of double-layered zigzag graphene nanoribbons  (P0061)
  Virtual Irago Conference 2020, Dec.11, 2020 (Chofu, Japan)
  R.Sun, T.Asano, and J. Nakamura
  
• Hydrogen Storage on Metal Decorated GeC Monolayer  (P0060)
  Virtual Irago Conference 2020, Dec.11, 2020 (Chofu, Japan)
  L.G. Arellano, A. Miranda, M. Cruz-Irisson, and J. Nakamura
  
• Oxygen Reduction Reaction Activity of Nitrogen-Doped Graphene with a Stone-Wales Defect  (P0055)
  Virtual Irago Conference 2020, Dec.11, 2020 (Chofu, Japan)
  X.Lu and J.Nakamura
  
• Derivatization effect of Metal Phthalocyanine on the catalytic activity for carbon monoxide reduction  (P0047)
  Virtual Irago Conference 2020, Dec.11, 2020 (Chofu, Japan)
  Y.Umejima and J.Nakamura
  
• 2D II-V compounds: A mechanism of structural stabilization  (P0037)
  Virtual Irago Conference 2020, Dec.11, 2020 (Chofu, Japan)
  T.Suga and J.Nakamura
  

2019

(1) Book chapters

• Section 7. Solution Plasma Reactions and Materials Synthesis
  Gasidit Panomsuwan, Tomonaga Ueno, Hiroharu Yui, Jun Nakamura, and Nagahiro Saito
  in H.Yamamoto and H.Kato (ed), Molecular Technology, Volume 3: Materials Innovation (Wiley, Feb. 2019) ISBN: 978-3-527-80272-2 (E-book)

(2) Original Papers

• Edge-State-Induced Stacking of Zigzag Graphene Nanoribbons
  T.Asano and J.Nakamura
  ACS Omega 4, 22035-22040 (2019); DOI=10.1021/acsomega.9b03138 (IF=2.584)
• Fe azaphthalocyanine unimolecular layers (Fe AzULs) on carbon nanotubes for realizing highly active oxygen reduction reaction (ORR) catalytic electrodes
  H.Abe, Y.Hirai, S.Ikeda, Y.Matsuo, H.Matsuyama, J.Nakamura, T.Matsue, and H.Yabu
  NPG Asia Materials 11, 57 (1-12) (2019); DOI=10.1038/s41427-019-0154-6 (IF= 8.052)
• Oxygen reduction reaction mechanism of N-doped graphene nanoribbons (Editor's Pick)
  H.Matsuyama, S.-I.Gomi, and J.Nakamura
  J.Vac.Sci.Technol B 37, 041803 (1-7) (2019); DOI=10.1116/1.5100535 (IF= 1.351)
• Effect of Water on the Manifestation of the Reaction Selectivity of Nitrogen-Doped Graphene Nanoclusters toward Oxygen Reduction Reaction
  H.Matsuyama, A.Akaishi, and J.Nakamura
  ACS Omega 4, 3832-3838 (2019); DOI=10.1021/acsomega.9b00015 (IF= 2.584)

(3) International Conference

• Chalcogen passivation of GaAs(111)B surfaces (P54)
  Irago Conference 2019, Oct.29, 2019 (Chofu, Japan)
  T.Suga, S.Goto, A.Ohtake, and J.Nakamura
• Structural stability of twisted bilayer graphene nano ribbons (P21)
  Irago Conference 2019, Oct.29, 2019 (Chofu, Japan)
  S.Chiba and J.Nakamura
• Edge-edge interaction in bilayer zigzag graphene nanoribbons (P20)
  Irago Conference 2019, Oct.29, 2019 (Chofu, Japan)
  T.Asano and J.Nakamura
• Oxygen reduction reaction for Fe phthalocyanine derivative (P19)
  Irago Conference 2019, Oct.29, 2019 (Chofu, Japan)
  H.Matsuyama, H.Abe, K.Ito, H.Yabu, and J.Nakamura
• Mechanism of chalcogen passivation of GaAs surfaces (EM+"D+AP+NS+PS-TuM6)
  AVS 66th International Symposium & Exhibition,Oct.21, 2019 (Columbus, USA)
  T.Suga, S.Goto, A.Ohtake, and J.Nakamura
• Structural stability of graphene nanoflakes: From the view point of aromaticity (2D+AP+EM+M1+MN+NS+PS+TF-MoA9)
  AVS 66th International Symposium & Exhibition,Oct.21, 2019 (Columbus, USA)
  M.Ushirozako, H.Matsuyama, A.Akaishi, and J.Nakamura
• Structural stability of graphene nanoflakes: from the view point of aromaticity (Jueves1100) (Special Invited Talk)
  Sociedad Mexicana de Física, LXII Congreso Nacional de Física, Oct 11, 2019 (Tabasco, Mexico)
  J.Nakamura
• Edge-state-induced stacking of zigzag graphene nano-ribbons (Tue1430)
  The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17), Jun. 25, 2019 (Shanghai, China)
  T.Asano and J.Nakamura
• Functionalization of graphene by N doping: Application to the oxygen reduction reaction (Mon1700)
  The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17), Jun. 24, 2019 (Shanghai, China)
  H.Matsuyama and J.Nakamura
• Bi-layer formation of water on graphene (Mon1645)
  The 17th International Conference on the Formation of Semiconductor Interfaces (ICFSI-17), Jun. 24, 2019 (Shanghai, China)
  A.Akaishi, T.Yonemaru, and J.Nakamura
• Chalcogen passivation of GaAs(111)B surfaces (MoP-F-18)
  Compound Semiconductor Week 2019, May 20, 2019 (Nara, Japan)
  T.Suga, S.Goto, A.Ohtake, and J.Nakamura
• Actividad catalítica del grafeno dopado con boro para reacciones de reducción de oxígeno (55)
  Sociedad Mexicana de Física Reunión Anual de la División de Estado Sólido 2019, May 2, 2019 (Papantla, Mexico)
  Lucia Guadalupe Arellano Sartorius and J.Nakamura
• Water wettability of graphene (1145) (Keynote Speech)
  Sociedad Mexicana de Física Reunión Anual de la División de Estado Sólido 2019, May 2, 2019 (Papantla, Mexico)
  J.Nakamura

(4) Domestic Conference

• (see Japanese page)

(5) Awards

• T.Suga, AVS Dorothy M. and Earl S. Hoffman Travel Grant (Oct.2019)
• Jun Nakamura, Reconocimiento (Ayuntamiento de Papantla, Veracruz, Mexico), May 2, 2019

(6) Press release

• in Japanese, Oct 18, 2019

2018

(1) Original Papers

• Atomic structure and passivated nature of the Se-treated GaAs(111)B surface
  A.Ohtake, S.Goto, and J.Nakamura
  Scientific Reports 8, 1220 (1-8) (2018). (IF= 4.259)
• Softly-confined Water Cluster between Freestanding Graphene Sheets
  R.Agustian, A.Akaishi, and J.Nakamura
  AIP Conf. Proc. 1929, 020006 (1-5) (2018).
• Structural stability and aromaticity of pristine and doped graphene nanoflakes
  A.Akaishi, M.Ushirozako, H.Matsuyama, and J.Nakamura
  Japanese Journal of Applied Physics 57, 0102BA (1-7) (2018). (IF= 1.452)

(2) International Conference

• Oxygen Reduction Reaction Mechanism for N-doped Graphene Nanoribbons (TF-WeP30)
  Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2018), Dec.5, 2018 (Hawaii, USA)
  H. Matsuyama, S. Gomi, and J.Nakamura
• Edge-state-induced stacking of zigzag graphene nano-ribbons (P68)
  The Irago Conference 2018, Nov.1, 2018 (Tokyo, Japan)
  T. Asano and J. Nakamura
• Na- and Be-decorated silicon carbide monolayer for H2 storage: a DFT study (P52)
  The Irago Conference 2018, Nov.1, 2018 (Tokyo, Japan)
  L. G. Arellano, F. de Santiago, A. Miranda, M. Cruz-Irisson, and J. Nakamura
• Oxygen Reduction Reaction on fullerene (P51)
  The Irago Conference 2018, Nov.1, 2018 (Tokyo, Japan)
  Y. Kikuchi and J. Nakamura
• Systematic evaluation of the structural stability of nitrogen-doped graphene (P50)
  The Irago Conference 2018, Nov.1, 2018 (Tokyo, Japan)
  S. Chiba and J. Nakamura
• Structural stability of the Se- or S-treated GaAs (111) B surface (P49)
  The Irago Conference 2018, Nov.1, 2018 (Tokyo, Japan)
  S. Goto, A. Ohtake, and J. Nakamura
• Oxygen reduction reaction activity for N-doped graphene nanoclusters (P48)
  The Irago Conference 2018, Nov.1, 2018 (Tokyo, Japan)
  H. Matsuyama, and J. Nakamura
• Stabilization Mechanism of the Se- or S-treated GaAs(111)B Surface (SS+AS+EM-WeA4)
  American Vacuum Society 65th International Symposium & Exhibition (AVS-65), Oct.24, 2018 (Long Beach, USA)
  S. Goto, A. Ohtake, and J. Nakamura
• Double Layer Formation of Water Molecules on Graphene (SS+HC-WeM13)
  American Vacuum Society 65th International Symposium & Exhibition (AVS-65), Oct.24, 2018 (Long Beach, USA)
  A. Akaishi, T. Yonemaru, and J. Nakamura
• Oxygen Reduction Reaction on Fullerene (SS+HC+NS+PS-TuM11)
  American Vacuum Society 65th International Symposium & Exhibition (AVS-65), Oct.23, 2018 (Long Beach, USA)
  Y. Kikuchi and J. Nakamura
• Formation of Water Layer on Graphene Surfaces(1405) (INVITED TALK)
  International Symposium of Water Frontier Science & Technology Research Center,Water on Materials Surface 2018 (WMS2018), Jul. 27, 2018 (Tokyo, Japan)
  J. Nakamura
• Intra- and inter-layer magnetic interactions in a van der Waals crystal (MN3)
  The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), Jun. 5, 2018 (Gdansk, Poland)
  M. Kawashima, A. Akaishi, and J. Nakamura
• Systematic evaluation of the structural stability of N-doped graphene (MN2)
  The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), Jun. 5, 2018 (Gdansk, Poland)
  S. Chiba and J. Nakamura
• Edge-state-induced stacking of zigzag graphene nano-ribbons (MN1)
  The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), Jun. 5, 2018 (Gdansk, Poland)
  T. Asano and J. Nakamura
• Water layer formation on graphene (I4) (INVITED TALK)
  The 6th International Workshop on Solution Plasma and Molecdular Technology (SPM6), Jun. 5, 2018 (Gdansk, Poland)
  J. Nakamura
• Intra- and inter-layer magnetic interactions in a van der Waals crystal(O48.15)
  2018 DPG Joint meeting of the DPG and EPS Condesed Matter Divisions, Mar. 13, 2018 (Berlin, Germany)
  M.Kawashima, A. Akaishi, and J. Nakamura
• Formation of Water Bilayer on Graphene Surfaces (PCSI-TuM12)
  45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45), Jan. 16, 2018 (Kailua-Kona, USA)
  A. Akaishi and J. Nakamura
• Quantitative Relation between the Structural Stability and the Aromaticity of Graphene Nanoflakes (PCSI-TuM11)
  45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45), Jan. 16, 2018 (Kailua-Kona, USA)
  M. Ushirozako, H. Matsuyama, A. Akaishi, and J. Nakamura
• Effect s of Edge Structures on the Oxygen Reduction Reaction Activity of Nitrogen-doped Graphene Nanoribbons (PCSI-TuM8)
  45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45), Jan. 16, 2018 (Kailua-Kona, USA)
  S.-I. Gomi, H. Matsuyama, A. Akaishi, and J. Nakamura

(3) Domestic Conference

• (see Japanese page)

(4) Awards

• Y.Kikuchi, AVS Dorothy M. and Earl S. Hoffman Travel Grant (Oct.2018)
• S.Goto, AVS Dorothy M. and Earl S. Hoffman Travel Grant (Oct.2018)

2017

(1) Original Papers

• Reaction Selectivity for Oxygen Reduction of N-Doped Graphene Nanoclusters
  H.Matsuyama, A.Akaishi, and J.Nakamura
  ECS Trans. 80, 685-690 (2017).
• Formation of Water Layer on Graphene Surfaces
  A.Akaishi, T.Yonemaru, and J.Nakamura
  ACS Omega 2, 2184-2190 (2017).

(2) International Conference

• Effect of edge structures on the oxygen reduction reaction activity of nitrogen-doped graphene nanoribbons(P54)
  The Irago Conference 2017, Nov.1, 2017 (Chofu, Japan)
  S. Gomi, H. Matsuyama, A. Akaishi, and J. Nakamura
• Relationship between Stability and Aromaticity of Graphene Nanoflakes(P42)
  The Irago Conference 2017, Nov.1, 2017 (Chofu, Japan)
  A. Akaishi, M. Ushirozako, H. Matsuyama, and J. Nakamura
• Softly-confined water cluster between free standing graphene sheets(GSS2-7)
  The Irago Conference 2017, Nov.1, 2017 (Chofu, Japan)
  R. Agustian, A. Akaishi, and J. Nakamura
• Structural stability of the Se-treated GaAs(111)B surface (GSS2-6)
  The Irago Conference 2017, Nov.1, 2017 (Chofu, Japan)
  S. Goto, A. Ohtake, A. Akaishi, and J. Nakamura
• Oxygen Reduction Reaction on N-doped Graphene Nanoclusters: Dependence on Nitrogen Configuration (2P-42)
  International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth (NENCS), Oct. 28, 2017 (Chofu, Japan)
  H. Matsuyama, A. Akaishi, and J. Nakamura
• Anomalous Enhancement of Seebeck Coefficients fo the Graphene/h-BN Composites(O-10)
  International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth (NENCS), Oct. 28, 2017 (Chofu, Japan)
  J. Nakamura, and A. Akaishi
• Reaction Selectivity for Oxygen Reduction of N-Doped Graphene Nanoclusters (1496)
  232nd ECS Meeting, Oct. 1, 2017 (National Harbor, MD, USA)
  H. Matsuyama, A. Akaishi, and J.Nakamura
• Structual Stability of Graphene Nanoflakes: from the View Point of Aromaticity (C1) (INVITED TALK)
  The 5th International Workshop on Solution Plasma and Molecdular Technology (SPM5), Jun. 27 , 2017 (Greifswald, Germany)
  J. Nakamura, M. Ushirozako, H. Matsuyama, and A. Akaishi
• Two- to Three-Dimentional Transition of Softly Confined Water Between Graphene Sheets (MN2)
  The 5th International Workshop on Solution Plasma and Molecdular Technology (SPM5), Jun. 27 , 2017 (Greifswald, Germany)
  R. Agustian, A. Akaishi, and J. Nakamura
• Site-dependent Oxygen Reduction Reaction of N-doped Graphene Nanoclusters (PCSI-MoA41)
  44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44), Jan. 16, 2017 (Santa Fe, USA)
  H. Matsuyama, S.-I. Gomi, M. Ushirozako, A. Akaishi, and J. Nakamura
• Mechanism of Stabilization and Magnetization of Impurity-doped Zigzag Graphene Naoribbons (PCSI-MoA7)
  44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44), Jan. 16, 2017 (Santa Fe, USA)
  Y. Uchida, S.-I. Gomi, H. Matsuyama, A. Akaishi, and J. Nakamura

(3) Domestic Conference

• (see Japanese page)

(4) Awards

• The best presentation awards, 2nd place (SPM-5, The 5th International Workshop on Solution Plasma and Molecular Technologies)
  "Two- to Three-Dimentional Transition of Softly Confined Water Between Graphene Sheets" by Rifan Agustian, Akira Akaishi, Jun Nakamura

   

  
  

  2016

  (1) Original Papers

  • Mechanism of stabilization and magnetizationf impurity-doped zigzag graphene nanoribbons
    Y.Uchida, S.-I.Gomi, H.Matsuyama, A.Akaishi, and J.Nakamura
    Journal of Applied Physics 120, 214301 (1-7) (2016). (IF= 2.068)
  • Mn-induced surface reconstructions on GaAs(001)
    A.Ohtake, A.Hagiwara, K.Okukita, K.Funatsuki, and J.Nakamura
    Journal of Physical Chemistry C 120, 6050-6062 (2016). (IF=4.536)
  • First-principles study of locally disordered structures of Mn-induced GaAs(001)-(2x2) surface
    A.Akaishi, K.Funatsuki, A.Ohtake, and J.Nakamura
    Japanese Journal of Applied Physics (JJAP) 55, 08NB21(1-4) (2016). (IF= 1.452)

  (2) Review papers

  • Anomalous enhancement of Seebeck coefficients of the Graphene/h-BN composites (Review, Invited)
    J.Nakamura and A.Akaishi
    Japanese Journal of Applied Physics (JJAP), 55, 1102A9(1-9) (2016). (IF= 1.452)

  (3) International Conference

  • Structural stability of graphene nanoflakes (P86)
    The Irago Conference 2016, Nov.1, 2016 (Chofu, Japan)
    M. Ushirozako, A. Akaishi, and J. Nakamura
  • Formation of water layers on graphene surfaces (P54)
    The Irago Conference 2016, Nov.1, 2016 (Chofu, Japan)
    A. Akaishi and J. Nakamura
  • Oxygen reduction reaction on nitrogen-doped graphene nanoribbons (P47)
    The Irago Conference 2016, Nov.1, 2016 (Chofu, Japan)
    S.-I. Gomi, H. Matsuyama, A. Akaishi, and J. Nakamura
  • Oxygen reduction reaction on nitrogen-doped graphene nanoclusters (P34)
    The Irago Conference 2016, Nov.1, 2016 (Chofu, Japan)
    H. Matsuyama, S. Tanaka, A. Akaishi, and J. Nakamura
  • Electrical conductivity of the biaxally-strained GaSb (P33)
    The Irago Conference 2016, Nov.1, 2016 (Chofu, Japan)
    H. Kishimoto, T. Hatayama, A. Akaishi, and J. Nakamura
  • Interfacial water layer on doped graphene surfaces (Th3S-6)
    13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct. 12, 2016 (Rome, Italy)
    A. Akaishi and J.Nakamura
  • Structural stability of graphene nanoflakes (P26)
    13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct. 12, 2016 (Rome, Italy)
    M.Ushirozako, A. Akaishi, and J.Nakamura
  • Electrical conductivity of the biaxially-strained GaSb(111) and GaAs(001) (P13)
    13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct. 12, 2016 (Rome, Italy)
    H. Kishimoto, T. Hatayama, A. Akaishi, and J.Nakamura
  • Electrical conductivity of the biaxially-strained GaSb(111) films (MoP-ISCS-074)
    The 43rd International Symposium on Compound Semiconductors (ISCS 2016), Jun. 27, 2016 (Toyama, Japan)
    T. Hatayama, H. Kishimoto, A. Akaishi, and J.Nakamura
  • Water adsorption on doped graphene surfaces (O3)
    4th International Workshop on Solution Plasma and Molecular Technologies (SPM-4), Jun. 8, 2016 (Pilsen, Czech Republic)
    A.Akaishi and J.Nakamura
  • Mechanism of Stabilization and Magnetization of Impurity-doped Zigzag Graphene Nanoribbons (J2) (INVITED TALK)
    4th International Workshop on Solution Plasma and Molecular Technologies (SPM-4), Jun. 8, 2016 (Pilsen, Czech Republic)
    J.Nakamura, Y.Uchida, S.Gomi, H.Matsuyama, and A.Akaishi
  • Effects of edge structures on oxygen reduction reaction for nitrogen-doped graphene nanoclusters (MN5)
    4th International Workshop on Solution Plasma and Molecular Technologies (SPM-4), Jun. 8, 2016 (Pilsen, Czech Republic)
    H.Matsuyama, S.Tanaka, A.Akaishi and J.Nakamura
    
  • Anomalous enhancement of Seebeck coefficients for the graphene/h-BN composites (B14) (INVITED TALK)
    EMN Meeting on Carbon Nanostructures, Mar. 29, 2016 (Honolulu, USA)
    J.Nakamura and Y.Yokomizo

  (4) Domestic Conference

  • (see Japanese page)

   

  
  

  2015

  (1) Original Papers

  • Anomalous Stabilization in Nitrogen-Doped Graphene
    T.Umeki, A.Akaishi, A.Ichikawa, and J.Nakamura
    Journal of Physical Chemistry C 119, 6288-6292 (2015). (IF=4.536)

  (2) International Conference

  • Layered Water on Graphene Surfaces(A12) (INVITED TALK)
    2015 EMN Bangkok Meeting, Nov.10, 2015 (Bangkok, Thailand)
    A.Akaishi and J.Nakamura
  • First-principles Evaluation of The Oxygen Reduction Reaction on Nitrogen-doped Graphene(A11) (INVITED TALK)
    2015 EMN Bangkok Meeting, Nov.10, 2015 (Bangkok, Thailand)
    J.Nakamura, A.Ichikawa, H.Matsuyama, and A.Akaishi
  • Strain effect on the hole effective mass of GaSb: A first-priciples study(P58)
    The Irago Conference 2015, Oct.23, 2015 (Tahara, Japan)
    H.Kishimoto, T.Hatayama, A.Akaishi, and J.Nakamura
  • First-principles study on locally-disordered structures of the Mn-induced GaAs(001)-(2 x 2) surface(P57)
    The Irago Conference 2015, Oct.23, 2015 (Tahara, Japan)
    K.Funatsuki, A.Akaishi, and J.Nakamura
  • Conformational stabilization of graphene nanoflakes(P28)
    The Irago Conference 2015, Oct.23, 2015 (Tahara, Japan)
    M.Ushirozako, A.Akaishi, and J.Nakamura
  • Oxygen reduction reaction on the basal plane of nitrogen-doped graphene: Effects of local arrangement of dopants(GSS1)
    The Irago Conference 2015, Oct.23, 2015 (Tahara, Japan)
    H.Matsuyama, A.Ichikawa, A.Akaishi, and J.Nakamura
  • Oxygen Reduction Reaction on Nitrogen-doped Graphene(2D+EM+IS+MC+NS+SP+SS-WeA12)
    American Vacuum Society 62nd International Symposium & Exhibition (AVS-62),Oct.21, 2015 (San Jose, USA)
    J.Nakamura, A.Ichikawa, H.Matsuyama, and A.Akaishia
  • Edge-state-induced Stabilization of Dopants in Graphene(2D+MN+NS+SP+SS+TF-WeM11)
    American Vacuum Society 62nd International Symposium & Exhibition (AVS-62),Oct.21, 2015 (San Jose, USA)
    Y.Uchida, A.Akaishi, and J.Nakamura
  • Electronic Structures of the Biaxiallystrained GaSb(111) Films(TF+AS+SS-MoM9)
    American Vacuum Society 62nd International Symposium & Exhibition (AVS-62),Oct.19, 2015 (San Jose, USA)
    T.Hatayama, A.Akaishi, and J.Nakamura
  • Oxygen reduction reaction on the basal plane of nitrogen- doped graphene(Th-A02)
    31st European Conference on Surface Science (ECOSS-2015), Sep. 3, 2015 (Barcelona, Spain)
    J.Nakamura, A.Ichikawa, H.Matsuyama, and A.Akaishi
  • Wettability of graphene surface(P-Mo-015)
    31st European Conference on Surface Science (ECOSS-2015), Sep. 3, 2015 (Barcelona, Spain)
    A.Akaishi and J.Nakamura
  • Oxygen reduction reaction on the basal plane of nitrogen-doped graphene(WedP41)
    Graphene Week 2015, Jun.24, 2015 (Manchester, England)
    J.Nakamura, A.Ichikawa, H.Matsuyama, and A.Akaishi
  • Water layers on graphene surface (WedP5)
    Graphene Week 2015, Jun.24, 2015 (Manchester, England)
    A.Akaishi and J.Nakamura
  • Double-layer structure of water molecules on the graphene surface (O6)
    3rd International Workshop on Solution Plasma and Molecular Technologies (SPM-3), May 8, 2015 (Bangkok, Thailand)
    A.Akaishi and J.Nakamura
  • Oxygen reduction reaction on nitrogen-doped graphene(J5) (INVITED TALK)
    3rd International Workshop on Solution Plasma and Molecular Technologies (SPM-3), May 7, 2015 (Bangkok, Thailand)
    J.Nakamura, A.Ichikawa, H.Matsuyama, and A.Akaishi
  • Catalytic reaction of oxygen on nitrogen-doped graphene(MN9)
    3rd International Workshop on Solution Plasma and Molecular Technologies (SPM-3), May 6, 2015 (Bangkok, Thailand)
    H.Matsuyama, A.Ichikawa, A.Akaishi, and J.Nakamura
  • Structural Stability of B-, N-Doped Graphene Nanoribbons (A6-P-15)
    7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2015), Mar. 30, 2015 (Nagoya, Japan)
    Y.Uchida, A.Akaishi, and J.Nakamura
  • Universal Feature of Seebeck Coefficients in Graphene/h-BN Nano-Composites (A6-P-14)
    7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2015), Mar. 30, 2015 (Nagoya, Japan)
    Y.Ayako, A.Akaishi, and J.Nakamura
  • Electrocatalytic Activity for Oxygen Reduction on Nitrogen-Doped Graphene (A6-P-13)
    7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2015), Mar. 30, 2015 (Nagoya, Japan)
    A.Ichikawa, A.Akaishi, and J.Nakamura
  • Giant Seebeck Coefficiens for the Graphene/h-BN Superlattice (A6-O-01)
    7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2015), Mar. 28, 2015 (Nagoya, Japan)
    J.Nakamura and Y.Yokomizo
  • Catalytic Reduction of Oxygen on Nitrogen-doped Graphene (Mo1735)
    42nd Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-42), Jan. 19, 2015 (Snowbird, Utah, USA)
    A.Ichikawa, A.Akaishi, and J.Nakamura

  (3) Domestic Conference

  • (see Japanese page)

   

   

  before 2014

  (1) Original Papers

  • Self-assembled growth of Ga droplets on GaAs(001): Role of surface reconstruction
    A.Ohtake, T.Mano, A.Hagiwara, and J.Nakamura
    Crystal Growth & Design 14, 3110-3115 (2014). (IF=4.891)
  • Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)-c(4×4)α surfaces
    S.Kaku, J.Nakamura, K.Yagyu, and J.Yoshino
    Surface Science 625, 84-89 (2014). (IF=1.925)
  • Giant Seebeck coefficient of the graphene/h-BN superlattices
    Y.Yokomizo and J.Nakamura
    Applied Physics Letters 103, 113901 (1-4) (2013). (IF=3.302)
  • Ballistic phonon thermal conductance in graphene nano-ribbons
    H.Tomita and J.Nakamura
    Journal of Vacuum Science and Technology B 31, 04D104 (1-7) (2013). (IF=1.464)
  • Controlled incorporation of Mn in GaAs: Role of surface reconstructions
    A.Ohtake, A.Hagiwara, and J.Nakamura
    Physical Review B 87, 165301 (1-5) (2013). (IF=3.736)
  • Magnetic properties of a single molecular layer of MnAs on GaAs(110)
    M.Hirayama, A.Natori, and J.Nakamura
    Physical Review B 87, 075428 (1-6) (2013). (IF=3.736)
  • First-principles calculations of the dielectric constant for the GeO2 films
    M.Tamura, J.Nakamura, and A.Natori
    Key Engineering Materials 470, 60-65 (2011).
  • D- centers in uniaxially stressed Si and in Si/SiO2 quantum wells
    T.Chiba, J.Nakamura, and A.Natori
    Physical Review B 82, 195201 (1-9) (2010).
  • Conductivity and dielectric constant of nanotube/polymer composites
    Y.Hazama, N.Ainoya, J.Nakamura, and A.Natori
    Physical Review B 82, 045204 (1-8) (2010).
    also appear in Virtual Journal of Nanoscale Science & Technology 22, Issue 5 (2010).
  • Structural and electronic properties of carbon nano-cylinder consisting of nanoribbon-walls with arrayed-oxygen hinges
    Y.Fujii, A.Natori, and J.Nakamura
    Journal of Vacuum Science and Technology B 28, C5C8 (1-4) (2010).
    also appear in Virtual Journal of Nanoscale Science & Technology 22, Issue 5 (2010).
  • The anisotropy of ac conductivity and dielectric constant of anisotropic conductor–insulator composites
    Y.Hazama, J.Nakamura, and A.Natori
    Journal of Materials Science 45, 2843-2851 (2010).
  • Variable stoichiometry in Sb-induced (2×4) reconstructions on GaAs(001)
    A.Ohtake, M.Hirayama, J.Nakamura, and A.Natori
    Physical Review B 80, 235329 (1-9) (2009).
  • Control mechanism of friction by dynamic actuation of nanometer-sized contacts
    H.Iizuka, J.Nakamura, and A.Natori
    Physical Review B 80, 155449 (1-8) (2009).
    also appear in Virtual Journal of Nanoscale Science & Technology 20, Issue 19 (2009).
  • Ballistic thermal conductance of electrons in graphene ribbons
    E.Watanabe, S.Yamaguchi, J.Nakamura, and A.Natori
    Physical Review B 80, 085404 (1-6) (2009).
    also appear in Virtual Journal of Nanoscale Science & Technology 20, Issue 7 (2009).
  • Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110)
    M.Hirayama, A.Natori, and J.Nakamura
    Journal of Vacuum Science and Technology B 27, 2062-2065 (2009).
    also appear in Virtual Journal of Nanoscale Science & Technology 20, Issue 6 (2009).
  • In-plane strain effects on dielectric properties of the HfO2 thin film
    S.Wakui, J.Nakamura, and A.Natori
    Journal of Vacuum Science and Technology B 27, 2020-2023 (2009).
  • Structural and electronic properties of the planar C-skeleton polymers
    J.Nakamura, N.Arimura, M.Hirayama, and A.Natori
    Applied Physics Letters 94, 223107 (1-3) (2009).
  • Band-bending effects on scanning tunneling microscope images of subsurface dopants: First-principles calculations
    M.Hirayama, J.Nakamura, and A.Natori
    Journal of Applied Physics 105, 083720 (1-4) (2009).
  • Negative donors in bulk Si and Si/SiO2 quantum wells in a magnetic field
    J.Inoue, T.Chiba, A.Natori, and J.Nakamura
    Physical Review B 79, 305206 (1-8) (2009).
  • Size effects in friction of multiatomic sliding contacts
    M.Igarashi, A.Natori, and J.Nakamura
    Physical Review B 78, 165427 (1-10) (2008).
  • Atomic scale dielectric constant near the SiO2/Si(001) interface
    S.Wakui, J.Nakamura, and A.Natori
    J.Vac.Sci.Technol. B 26, 1579-1584 (2008).
  • Semiconducting nature of the oxygen-adsorbed graphene sheet
    J.Ito, J.Nakamura, and A.Natori
    Journal of Applied Physics 103, 113712-1 - 113712-5 (2008).
  • Structural bistability of the oxygen-adsorbed graphene sheet
    J.Nakamura, J.Ito, and A.Natori
    J.Phys.: Conf.Ser. 100, 052019 (1-4) (2008).
  • Negative donors in multivalley semiconductors: Diffusion quantum Monte Carlo simulations
    J.Inoue, J.Nakamura, and A.Natori
    Physical Review B 77, 125213-1 - 125213-5 (2008).
  • Ballistic thermal conductance of a graphene sheet
    K.Saito, J.Nakamura, and A.Natori
    Physical Review B 76, 115409-1 - 115409-4 (2007).
    also appear in
    Virtual Journal of Nanoscale Science & Technology 16, Issue 13 (2007).
  • Nano-Scale Profile of the Dielectric Constant Near the Si/oxide Interface: A First-Principles Approach
    J.Nakamura, S.Wakui, S.Eguchi, R.Yanai, and A.Natori
    ECS Trans. 11, 173-182 (2007).
  • STM simulations for B- and P-doped Si(111) surfaces
    M.Hirayama, J.Nakamura, and A.Natori
    Japanese Journal of Applied Physcs 46, 5643-5646 (2007).
  • Mechanism of velocity saturation of atomic friction force and the dynamic superlubricity at torsional resonance
    M.Igarashi, J.Nakamura, and A.Natori
    Japanese Journal of Applied Physcs 46, 5591-5594 (2007).
  • Dielectric properties of the interface between Si and SiO2
    S.Wakui, J.Nakamura, and A.Natori
    Japanese Journal of Applied Physcs 46, 3261-3264 (2007).
  • ac conductivity and dielectric constant of conductor-insulator composites
    T.B.Murtanto, S.Natori, J.Nakamura, and A.Natori
    Physical Review B 74, 115206-1 - 115206-7 (2006).
  • Charge correlation and spin coupling in double quantum dots: a quantum diffusion Monte Carlo study
    H.Masu, T.Yamada, J.Nakamura, and A.Natori
    Physical Review B 74, 075312-1 - 075312-8 (2006).
  • Dielectric discontinuity at structural boundaries in Si
    J.Nakamura and A.Natori
    Applied Physics Letters 89, 053118-1 - 053118-3 (2006).
  • First-principles calculations of dielectric constants for ultrathin SiO2 films
    S.Wakui, J.Nakamura, and A.Natori
    Journal of Vacuum Science and Technology B 24, 1992-1996 (2006).
  • First-principles evaluations of dielectric constants for ultra-thin semiconducting films
    J.Nakamura and A.Natori
    Surface Science 600, 4332-4336 (2006).
  • Structural stabilities and electronic properties of planar Si compounds
    M.Hirayama, J.Nakamura, and A.Natori
    e-Journal of Surface Science and Nanotechnology 4, 528-533 (2006).
  • Dielectric properties of hydrogen-terminated Si(111) ultrathin films
    J.Nakamura, S.Ishihara, T.Shimizu, K.Natori, and A.Natori
    Journal of Applied Physics 99, 054309-1 - 054309-5 (2006).
  • Erratum: Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures
    J.Nakamura, S.Wakunami, and A.Natori
    Physical Review B 73, 169901-1 (2006).
  • Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures
    J.Nakamura, S.Wakunami, and A.Natori
    Physical Review B 72, 235415-1 - 235415-6 (2005).
    also appear in
    Virtual Journal of Nanoscale Science & Technology 12, Issue 26 (2005).
    see also Erratum: Physical Review B 73, 169901 (2006).
  • Electronic and magnetic properties of BNC ribbons
    J.Nakamura, T.Nitta, and A.Natori
    Physical Review B 72, 205429-1 - 205429-5 (2005).
    also appear in
    Virtual Journal of Nanoscale Science & Technology 12, Issue 23 (2005).
  • Dielectric properties of ultra-thin films; Microscopic points of view
    J.Nakamura and A.Natori
    Journal of the Surface Science Society of Japan, 26, 392-397 (2005). (in Japanese)
  • Structural stability for Si(001) and Ge(001) in external eletric fields
    J.Nakamura and A.Natori
    Japanese Journal of Applied Physics 44, 5413-5416 (2005).
  • Energy barrier for dimer flipping at the Si(001)-(2x1) surface in external electric fields
    J.Nakamura and A.Natori
    Physical Review B 71, 113303-1 - 113303-4 (2005).
  • Ge/Si(113)-(2x2) surfaces: structural features induced by self-interstitial atoms
    Z.H.Zhang, K.Sumitomo, and J.Nakamura
    Wuli 33, 708-712 (2004). (in Chinese)
  • Kinetics in surface reconstructions on GaAs(001)
    A.Ohtake, P.Kocan, J.Nakamura, A.Natori, and N.Koguchi
    Physical Review Letters 92, 236105-1 - 236105-4 (2004).
  • Direct observation of Au deposition processes on the InSb{111}A,B-(2x2) surfaces
    S.P.Cho, J.Nakamura, N.Tanaka, and T.Osaka
    Nanotechnology 15, S371-S375 (2004).
  • First-principles study on the atomic and electronic structures of the Au/Si(111)-alpha(Sqrt3xSqrt3)R30 surface
    T.Kadohira, J.Nakamura, and S.Watanabe
    e-Journal of Surface Science and Nanotechnology 2, 146-150 (2004).
  • Atomic scale friction of nanoscale clusters
    K.Ohno, T.Nitta, J.Nakamura, and A.Natori
    Journal of Vacuum Science and Technology B 22, 2026-2029 (2004).
    also appear in
    Virtual Journal of Nanoscale Science & Technology 10, Issue 9 (2004)
  • Ga-As dimer structure for the GaAs(001)-c(4x4) surface
    A.Ohtake, J.Nakamura, N.Koguchi, and A.Natori
    Surface Science 566-568, 58-62 (2004).
  • Band discontinuity at ultrathin SiO2/Si(001) interfaces
    M.Watarai, J.Nakamura, and A.Natori
    Physical Review B 69, 035312-1 - 035312-6 (2004).
  • Structural stability and anisotropic stress of the Ge /Si(113)-2 x 2 surface
    J.Nakamura, Z.Zhang, K.Sumitomo, H.Omi, T.Ogino, and A.Natori
    Journal of the Surface Science Society of Japan, 24,526-530 (2003). (in Japanese)
  • First principles calculations of band discontinuity at ultrathin SiO2/Si interfaces
    M.Watarai, J.Nakamura, and A.Natori
    Journal of the Surface Science Society of Japan, 24, 550-555 (2003). (in Japanese)
  • Structural stability of the Ge /Si(113)-2 x 2 surface
    J.Nakamura, Z.Zhang, K.Sumitomo, H.Omi, T.Ogino, and A.Natori
    Applied Surface Science 212/213, 724-729 (2003).
  • Dynamics of c(4x2) phase-transition in Si(100) surfaces
    A.Natori, M.Osanai, J.Nakamura, and H.Yasunaga
    Applied Surface Science 212/213, 705-710(2003).
  • Alloying processes in the Au/InSb(111)A system
    S.P.Cho, N.Hara, N.Naruse, T.Kadohira, J.Nakamura, and T.Osaka
    Journal of the Surface Science Society of Japan, 24, 111-117 (2003). (in Japanese)
  • New structure model for the GaAs(001)-c(4x4) surface
    A.Ohtake, J.Nakamura, S.Tsukamoto, N.Koguchi, and A.Natori
    Physical Review Letters 89, 206102-1 - 206102-4 (2002).
  • Atomic structures of the Ge/Si(113)-(2x2) surface
    Z.Zhang, J.Nakamura, K.Sumitomo, H.Omi, T.Ogino, and A.Natori
    Physical Review Letters 88, 256101-1 - 256101-4 (2002)
    also appear in
    Virtual Journal of Nanoscale Science & Technology 5, Issue 24 (2002)
  • STM images apparently corresponding to a stable structure:
    Considerable fluctuation of a phase boundary of the Si(111)Sqrt3xSqrt3-Ag surface
    Y.Nakamura, Y.Kondo, J.Nakamura, and S.Watanabe
    Physical Review Letters 87, 156102-1 - 156102-4 (2001)
  • Structural and cohesive properties of a C60 monolayer
    J.Nakamura, T.Nakayama, S.Watanabe, and M.Aono
    Physical Review Letters 87, 048301-1 - 048301-4 (2001)
    also appear in
    Virtual Journal of Nanoscale Science & Technology 4, Issue 4 (2001)
  • Surface structures of GaAs{111}A,B-(2x2)
    A.Ohtake, J.Nakamura, T.Komura, T.Hanada, T.Yao, H.Kuramochi, and M.Ozeki
    Physical Review B 64, 045318-1 - 045318-8 (2001)
  • Anisotropic electronic structure of the Si(111)-(4x1)In surface
    J.Nakamura, S.Watanabe, and M. Aono
    Physical Review B 63, 193307-1 - 193307-4 (2001)
  • Wurtzite-zincblende polytypism in ZnSe on GaAs(111)
    A.Ohtake, J.Nakamura, M.Terauchi, F.Sato, M.Tanaka, K.Kimura, and T.Yao
    Physical Review B 63, 195325-1 - 195325-4 (2001)
  • Theoretical study on the structural phase transition of Si(111)-Sqrt3xSqrt3-Ag surface
    Y.Nakamura, Y.Kondo, J.Nakamura, and S.Watanabe
    Surface Science 493, 206-213 (2001)
  • Structural stability and electronic states of gold nanowires
    J.Nakamura, N.Kobayashi, S.Watanabe, and M.Aono
    Surface Science 482-485, 1266-1271 (2001)
  • Atomic and electronic structure of the Si(111)-Sqrt3xSqrt3-Ag surface re-examined by using first-principles calculations
    S.Watanabe, Y.Kondo, Y.Nakamura, and J.Nakamura
    Science and Technology of Advanced Materials 1, 167-172 (2000)
  • Study of Diffusion and Defects by Medium-Energy Coaxial Impact-Collision Ion Scattering Spectroscopy
    T.Kobayashi, C.F.McConville, J.Nakamura, G.Dorenbos, H.Sone, T.Katayama, and M.Aono
    Defect and Diffusion Forum, 183-185, 207-214 (2000)
  • Strain Relaxation in InAs/GaAs(111)A Heteroepitaxy
    A.Ohtake, M.Ozeki, and J.Nakamura
    Physical Review Letters 84, 4665-4668 (2000)
  • Photoinduced products in a C60 monolayer on Si(111)-Sqrt3xSqrt3-Ag: An STM study
    T.Nakayama, J.Onoe, K.Nakatsuji, J.Nakamura, K.Takeuchi, and M.Aono
    Surface Review and Letters 6, 1073-1078 (1999)
  • Chemical bonding features for faultily stacked interfaces of GaAs{111}
    J.Nakamura, T.Mishima, M.-H.Masui, M.Sawayanagi, S.-H.Cho, M.Nishizawa, T.Eguchi, and T.Osaka
    Journal of Vacuum Science and Technology B 16, 2426-2431 (1998)
  • Direct imaging of the evolving Au/InSb(111)B interface
    T.Mishima, J.Nakamura, K.Tsukada, M.Nishizawa, T.Eguchi, and T.Osaka
    Journal of Vacuum Science and Technology B 16, 2324-2327 (1998)
  • Structure of the InSb(111)A-(2Sqrt[3]x2Sqrt[3])-R30 surface and its dynamical formation processes
    M.Nishizawa, T.Eguchi, T.Misima, J.Nakamura, and T.Osaka
    Physical Review B 57, 6317-6320 (1998)
  • Structure and Electronic States of the Alpha-Sn(111)-(2x2) Surface
    T.Eguchi, J.Nakamura, and T.Osaka
    Journal of Physical Society of Japan 67, 381-384 (1998)
  • Reflection high-energy electron diffraction analysis of the InSb{111}A,B-(2x2) surfaces
    A.Ohtake and J.Nakamura
    Surface Science 396, 394-399 (1998)
  • Nucleation of Au on KCl(001)
    J.Nakamura, T.Kagawa, and T.Osaka
    Surface Science 389, 109-115 (1997)
  • s-character of MX4 (M=C, Si, Ge, X=F, Cl, Br, I) molecules
    J.Nakamura, H.Konogi, H.Sato, and T.Osaka
    Journal of Physical Society of Japan 66, 1656-1659 (1997)
  • Initial growth processes of Ag on polar and non-polar semiconductor substrates
    A.Ohtake, J.Nakamura, and T.Osaka
    Surface Science Letters 380, L437-L440 (1997)
  • Structural stability and its electronic origin of the GaAs(111)A-2x2 surface
    J.Nakamura, H.Nakajima, and T.Osaka
    Applied Surface Science 121/122, 249-252 (1997)
  • Geometry and lattice formation of surface layers of Sn growing on InSb{111}A,B
    A.Ohtake, J.Nakamura, T.Eguchi, and T.Osaka
    Physical Review B 54, 10358-10361 (1996)
  • Surfactant-induced bond strengthening in as-grown film surfaces
    J.Nakamura, H.Konogi, and T.Osaka
    Japanese Journal of Applied Physics 35, L441-L443 (1996)
  • Inhomogeneous charge transfer in an incommensurate system
    J.Nakamura, H.Konogi, and T.Osaka
    Physical Review B 51, 5433-5436 (1995)
  
  

  (2) Review papers and Proceedings
  
  	

  • Ballistic phonon thermal conductance in graphene nano-ribbon: First-principles calculations
    J.Nakamura and H.Tomita
    AIP Conf. Proc. 1566, 139-140 (2013).
  • Charge correlation and spin coupling in double quantum dots
    H.Masu, J.Nakamura, and A.Natori
    Proc. of the 28th International Conference on the Physics of Semiconductors, J.Menendez and C.G. van de Walle (Eds.) (AIP Proceedings), 893, 775-776 (2007).
  • Dielectric discontinuity at a twin boundary in Si(111)
    J.Nakamura and A.Natori
    Proc. of the 28th International Conference on the Physics of Semiconductors, J.Menendez and C.G. van de Walle (Eds.) (AIP Proceedings), 893, 5-6 (2007).
  • First-principles evaluations of dielectric properties from nano-scale points of view
    J.Nakamura, Sadakazu Wakui, and A.Natori
    Proc. of 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-8) (IEEE-Press) , 06EX1294, 1407-1410 (2006).
  • Dielectric properties of ultra-thin films
    J.Nakamura, S.Ishihara, H.Ozawa, and A.Natori
    Proc. of the 27th International Conference on the Physics of Semiconductors, J.Menendez and C.G. van de Walle (Eds.) (AIP Proceedings), pp.951-952 (2005).
  • Energy barrier for dimer flipping at the Si(001)-2x1 surface in external electrostatic fields
    J.Nakamura and A.Natori
    Proc. of the 27th International Conference on the Physics of Semiconductors, J.Menendez and C.G. van de Walle (Eds.) (AIP Proceedings), pp.371-372 (2005).
  • In-situ observation of Au deposition processes on the InSb{111}A,B-(2x2) surfaces by HR-profile TEM
    S.P.Cho, J.Nakamura, N.Tanaka, and T.Osaka
    Proc. of International Symposium on the Creation of Novel Nanomaterials (ISCNN'04), 78-79 (2004).
  • Structural stability of the Ge/Si(113)-2x2 surface
    J.Nakamura, A.Natori, Z.Zhang, K.Sumitomo, H.Omi, and T.Ogino
    Proc. of the Sixth Symposium on Atomic-scale Surface and Interface Dynamics
    14, 51-54 (2002)
  • Structural and electronic properties of two-dimensional C60
    J.Nakamura, T.Nakayama, S.Watanabe, and M.Aono
    Trans.Mat.Res.Soc.Jpn. 26, 1167-1170 (2001)
  • Electronic states and structural stability of gold nanowires
    J.Nakamura, N.Kobayashi, and M.Aono
    RIKEN Review 37, 17-20 (2001)
  • Structural ordering on Si(111)Sqrt3xSqrt3-Ag surface: Monte Carlo simulation based on first-principles calculations
    Y.Nakamura, Y.Kondo, J.Nakamura, and S.Watanabe
    Proc of the 25th International Conference on the Physics of Semiconductors, N. Miura and T. Ando (Eds.) (Osaka, Japan, September 17-22, 2000) (Springer-Verlag, Berlin Heidelberg, 2001), pp. 295-296.
  • Structure and electronic states for a single strand of gold atoms
    J.Nakamura and M.Aono
    RIKEN Review 25, 34-36 (1998)
  • Surfactant induced bond strengthening in as-grown film surfaces
    J.Nakamura, H.Konogi, and T.Osaka
    Bulletin of the Centre for Informatics, Waseda University 21, 12-20 (1997)
  • The initial adsorption processes of Au on the terrace and step of a KCl(001) surface
    J.Nakamura, T.Kagawa, H.Hayashi, and T.Osaka
    Bulletin of the Centre for Informatics, Waseda University 19, 33-40 (1996)
  • Charge Transfer Mechanism in the Incommensurately Grown Monolayer Graphite on the Si Terminated SiC(111) Surfaces
    J.Nakamura, H.Konogi, and T.Osaka
    Bulletin of the Centre for Informatics, Waseda University 19, 48-54 (1996)
  • Structural stability and its electronic origin of the GaAs(111)A-2x2 surface
    J.Nakamura, H.Nakajima, and T.Osaka
    Bulletin of the Society for Discrete Variational Xa, 9, 93-97 (1996)
  • Chemical bonding features of the GaAs{111} polar interface
    J.Nakamura and T.Osaka
    Bulletin of the Society for Discrete Variational Xa, 8, 224-228 (1995)
  • Effect of Sb on pseudomorphic growth of Ge on Si(111)
    J.Nakamura, H.Konogi, and T.Osaka
    Bulletin of the Society for Discrete Variational Xa, 7, 98-102 (1994)
  • Molecular dynamics simulations of the Initial Stages of Si on Si(001)-2x1
    K.Nakamura, J.Nakamura, T.Kagawa, and T.Osaka
    Bulletin of the Centre for Informatics, Waseda University 16, 17-25 (1994)
  • Charge transfer mechanism in the incommensurately grown monolayer graphite on the Si-terminated SiC(111) surface
    J.Nakamura, H.Konogi, and T.Osaka
    Bulletin of the Society for Discrete Variational Xa, 6, 127-130 (1993)
  • Charge transfer mechanism in the incommensurately grown monolayer graphite on the Si-terminated SiC(111) surface
    J.Nakamura, H.Konogi, and T.Osaka
    Bulletin of the Society for Discrete Variational Xa, 6, 127-130 (1993)

  
  

  (3) International conference
  
  		

  • Catalytic Reduction of Oxygen on Nitrogen-doped Graphene
    42nd Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-42), Jan. 19, 2015 (Snowbird, Utah, USA)
    A.Ichikawa, A.Akaishi, and J.Nakamura
  • Anomalous Enhancement of Seebeck Coefficients for the Graphene/h-BN Superlattices
    Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), Dec.11, 2014 (Hawaii USA)
    J.Nakamura and Y.Yokomizo
  • On the Wettability of Graphene
    Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), Dec.11, 2014 (Hawaii USA)
    A.Akaishi, T.Yonemaru, and J.Nakamura
  • Reduction of Oxygen on Nitrogen-Doped Graphene
    Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), Dec.8, 2014 (Hawaii USA)
    A.Ichikawa, A.Akaishi, and J.Nakamura
  • Universality of Seebeck Coefficients in Graphene/h-BN Nano-Composites
    Pacific Rim Symposium on Surfaces, Coatings & Interfaces (pacsurf2014), Dec.8, 2014 (Hawaii USA)
    Y.Ayako, A.Akaishi, and J.Nakamura
  • Configurational Disorder of Mn-induced (2x2) Reconstruction on GaAs(001)
    18th International Conference on Molecular Beam Expitaxy (MBE2014), Sep.11, 2014 (Flagstaff, USA)
    A.Hagiwara, A.Ohtake, and J.Nakamura
  • Adsorption of molecular oxygen on nitrogen-doped graphene
    Graphene Week 2014, Jun.23, 2014 (Gothenburg, Sweden)
    A.Ichikawa, A.Akaishi, and J.Nakamura
  • Recent development of droplet epitaxy in NIMS: InAs QDs on InP(111)A for telecom-application and reconstruction-dependent Ga droplet formation on GaAs (100) (INVITED TALK)
    2nd Workshop Droplet Epitaxy of Semiconductor Nanostructures, May 16, 2014 (Florence, Italy)
    T.Mano, A.Ohtake, T.Kuroda, H.Neul, X.Liu, K.Mitsuishi, A.Hagiwara, J.Nakamura, A.Castellano, S.Sanguinetti, T.Noda, Y. Sakuma, and K.Sakoda
  • Anomalous enhancement of Seebeck coefficients for the graphene/h-BN superlattices (INVITED TALK)
    2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), May 16, 2014 (Seoul, Korea)
    J.Nakamura and Y. Yokomizo
  • Structural stability of B-, N-doped zigzag graphene nanoribbons
    2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), May 15, 2014 (Seoul, Korea)
    Y. Uchida, A. Akaishi, and J.Nakamura
  • Seebeck coefficients of graphene/h-BN nano-composites
    2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), May 15, 2014 (Seoul, Korea)
    Y. Ayako, A. Akaishi, and J.Nakamura
  • Graphite is hydrophobic, or not?
    2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), May 15, 2014 (Seoul, Korea)
    T. Yonemaru, A. Akaishi, and J.Nakamura
  • Adsorption profiles of oxygen molecule on nitrogen-doped graphne
    2nd International Workshop on Solution Pasma and Molecular Technologies (SPM-2), May 15, 2014 (Seoul, Korea)
    A. Ichikawa, A. Akaishi, and J.Nakamura
  • Giant Seebeck Coefficients of the Graphene/h-BN Superlattices
    41st Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-41), Jan. 13, 2014 (Santa Fe, USA)
    Y.Yokomizo and J.Nakamura
  • Structural stability and electronic structure of boron- or nitrogen-doped graphene
    American Vacuum Society 60th International Symposium & Exhibition (AVS-60), Oct. 31, 2013 (Long Beach, USA)
    T.Umeki and J.Nakamura
  • Giant Seebeck coefficients of graphene/BN superlattices
    The 7th International Conference on the Fundamental Science of Graphene and Applications of Graphene-Based Devices (Graphene Week 2013), June 3, 2013 (Chemnitz, Germany)
    Y.Yokomizo and J.Nakamura
  • Ferromagnetic coupling between Mn atoms on the GaAs(110) surface
    The 40th International Symposium on Compound Semiconductors (ISCS-2013), May 20, 2013 (Kobe Japan)
    M.Hirayama, J.Nakamura, and S.Tsukamoto
  • First-principles approach to the ballistic phonon thermal transport in graphene nano-ribbons (INVITED TALK)
    1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Mar. 8, 2013 (Tokyo, Japan)
    J.Nakamura and H.Tomita
  • Giant Seebeck effect of graphene/BN superlattices
    1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Mar. 7, 2013 (Tokyo, Japan)
    Y.Yokomizo and J.Nakamura
  • First-pinciples study on the structural stability of boron- and nitrogen-doped graphene
    1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Mar. 7, 2013 (Tokyo, Japan)
    T.Umeki and J.Nakamura
  • Effects of surface geometry on the wettability of water on graphene
    1st International Workshop on Solution Plasma and Molecular Technologies (SPM-1), Mar. 7, 2013 (Tokyo, Japan)
    H.Yonemaru, H.Shimizu, and J.Nakamura
  • Effects of surface geometry on the wettability of water on graphene
    40th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-40), Jan. 23, 2013 (Waikoloa, USA)
    H.Yonemaru, H.Shimizu, and J.Nakamura
  • Incorporation of Cr or Mn at the GaAs(001)-c(4x4)a surface
    40th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-40), Jan. 21, 2013 (Waikoloa, USA)
    K.Okukita, A.Hagiwara, A.Ohtake, and J.Nakamura
  • Ballistic phonon thermal conductance in graphene nano-ribbon
    40th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-40), Jan. 20, 2013 (Waikoloa, USA)
    H.Tomita and J.Nakamura
  • Atomic Arrangements and structural stability of the Mn adsorbed GaAs(001) surfaces
    American Vacuum Society 59th International Symposium & Exhibition (AVS-59), Oct. 30, 2012 (Tampa, USA)
    A.Hagiwara, A.Ohtake, Y.Kanno, S.Yasumura, and J.Nakamura
  • Structural stability and electronic states of Cr or Mn on GaAs(001)-c(4x4)
    The 17th International Conference on Molecular Beam Epitaxy (MBE2012), Sep. 27, 2012 (Nara, Japan)
    K.Okukita and J.Nakamura
  • Ballistic phonon thermal conductancein Graphene Nano-Ribbon: First-principles calculations
    31st International Conference on the Physics of Semiconductors (ICPS 2012), July 31, 2012 (Zurich, Switzerland)
    J.Nakamura and H.Tomita
  • Optical characteristics of novel two-dimensional carbon materials; A possibility of ultra-transparent materials
    International Conference of New Science Created by Materials with Nano Spaces: from Fundamentals to Applications, Nov.25, 2011 (Tsukuba, Japan)
    H.Tomita and J.Nakamura
  • Optical characteristics of novel two-dimensional carbon materials; A possibility of ultra-transparent materials
    2011 MRS Fall Meeting and Exhibit (Materials Science Society), Dec.1, 2011 (Boston, USA)
    Y.Yokomizo and J.Nakamura
  • First-principles approach to ballistic phonon thermal conductivity in Graphene Nano-Ribbon
    2011 MRS Fall Meeting and Exhibit (Materials Science Society), Nov.30, 2011 (Boston, USA)
    H.Tomita and J.Nakamura
  • First-principles evaluation of the local dielectric properties of GeO2 ultrathin films (INVITED TALK)
    15th International Conference on Thin Films (ICTF-15), Nov.10, 2011 (Kyoto, Japan)
    J.Nakamura
  • Local profile of the dielectric constant near the oxygen vacancy in the GeO2 films
    AVS 58th International Symposium & Exhibition, Nov.1, 2011 (Nashville, USA)
    J.Nakamura and M.Tamura
  • Electronic and magnetic properties of chemically-derived graphene nano-ribbon
    22nd European Conference on Diamond (Diamond 2011), Sep. 5, 2011 (Garmisch-Partenkirchen, Germany)
    Y.Fujii, H.Tomita, and J.Nakamura
  • Mn-induced surface reconstructions on GaAs(001)
    38th International Symposium on Compound Semiconductors (ISCS-2011), May 23, 2011 (Berlin, Germany)
    A.Ohtake, M.Hirayama, Y.Kanno, and J.Nakamura
  • Nano-materials design by first-principles calculations
    5th Japanese-French Frontiers of Science Symposium(JFFoS-5), Jan.23 2011 (Tokyo, Japan)
    J .Nakamura
  • Band and Dielectric Discontinuities of the Si1-xGe/Si1-yCy Superlattices
    American Vacuum Society 57th International Symposium & Exhibition (AVS-57), Oct.19 2010 (Albuquerque, USA)
    T.Ohsugi and J.Nakamura
  • Electronic and Magnetic Properties of Functionalized Graphene
    American Vacuum Society 57th International Symposium & Exhibition (AVS-57), Oct.19 2010 (Albuquerque, USA)
    Y.Fujii and J.Nakamura
  • Percolation properties of nanotube/polymer composites
    18th International Vacuum Congress (IVC-18), Aug.25 2010 (Beijing, China)
    N.Ainoya, J.Nakamura, and A.Natori
  • Local profile of dielectric constants near the oxygen vacancy in GeO2
    International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE), Jun.4 2010 (Tokyo, Japan)
    M.Tamura, J.Nakamura, and A.Natori
  • Evaluation of the local dielectric constant near the oxygen vacancy for the defective HfO2 and SiO2 films
    The 37th International Symposium on Compound Semiconductors, Jun.1 2010 (Takamatsu, Japan)
    S.Wakui, J.Nakamura, and A.Natori
  • Magnetic coupling between Mn atoms on GaAs(110)
    The 37th International Symposium on Compound Semiconductors, Jun.1 2010 (Takamatsu, Japan)
    M.Hirayama, J.Nakamura, and A.Natori
  • Structural and electronic properties of “oxidized” carbon-nanocylinder
    The 37th International Symposium on Compound Semiconductors, Jun.1 2010 (Takamatsu, Japan)
    Y.Fujii, J.Nakamura, and A.Natori
  • Dielectric properties of GeO2 ultrathin films
    37th Conference on the Physics and Chemistry of Surfaces and Interfaces, Jan. 2010 (Santa Fe, NM, USA)
    M.Tamura, S.Wakui, J.Nakamura, and A.Natori
  • Structural and electronic properties of carbon nanocylinder consisting of nanoribbon-walls with arrayed-oxygen hinges
    37th Conference on the Physics and Chemistry of Surfaces and Interfaces, Jan. 2010 (Santa Fe, NM, USA)
    Y.Fujii, J.Nakamura, and A.Natori
  • ac conductivity and dielectric constant of nanotube polymer composites
    37th Conference on the Physics and Chemistry of Surfaces and Interfaces, Jan. 2010 (Santa Fe, NM, USA)
    Y.Hazama, N.Ainoya, J.Nakamura, and A.Natori
  • Structural and electronic properties of carbon nanotubes consisting of nanoribbon-walls with arrayed-oxygen hinges
    10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10), Sep. 2009 (Granada, Spain)
    J.Nakamura, Yuto Fujii, Motoi Hirayama, Shusuke Eguchi, Yuta Ogoshi, Jun Ito, and A.Natori
  • Inter-wire coupling of the Ga-substituted Mn atomic wire on GaAs(110) (INVITED POSTER)
    2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Aug. 2009 (Anan, Japan)
    M.Hirayama, J.Nakamura, A.Natori
  • Nano-scale profile of the dielectric constant near surfaces and interfaces: A first-principles approach (INVITED TALK)
    2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Aug. 2009 (Anan, Japan)
    J.Nakamura
  • Dielectric constant profiles of the thin-films: alpha- and beta-quartz phases of (Si or Ge) dioxides
    12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12), Jul. 2009 (Weimar, Germany)
    J.Nakamura, S.Wakui, M.Tamura, and A.Natori
  • Anisotropic half-metallic ground states of Mn atomic wires on GaAs(110)
    36th Conference on the Physics and Chemistry of Surfaces and Interfaces, Jan. 2009 (Santa Barbara, CA, USA)
    M.Hirayama, J.Nakamura, and A.Natori
  • In-plane strain effects on dielectric properties of the HfO2 thin film
    36th Conference on the Physics and Chemistry of Surfaces and Interfaces, Jan. 2009 (Santa Barbara, CA, USA)
    S.Wakui, J.Nakamura, and A.Natori
  • First-principles evaluation of the polytype-dependence of the local dielectric constant for SiC
    5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Nov. 2008 (Tokyo, Japan)
    K.Sato, Y.Iwasaki, S.Wakui, J.Nakamura, and A.Natori
  • Half-metallic ground states of Mn atomic wires on GaAs(110)
    5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Nov. 2008 (Tokyo, Japan)
    M.Hirayama, J.Nakamura, and A.Natori
  • Conductivity and dielectric constant of anisotropic CNT/polymer composites
    5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Nov. 2008 (Tokyo, Japan)
    Y.Hazama, J.Nakamura, and A.Natori
  • Dielectric properties of the ultra-thin La2O3(0001) film
    5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Nov. 2008 (Tokyo, Japan)
    R.Yanai, J.Nakamura, and A.Natori
  • Structural stability and cohesive properties of the oxygen-adsorbed graphene
    5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Nov. 2008 (Tokyo, Japan)
    S.Eguchi, J.Nakamura, and A.Natori
  • Activities of the Japan Society of Applied Physics (JSAP)
    The 3rd IUPAP International Conference on Women in Physics 2008, Oct. 2008 (Seoul, Korea)
    K.Ishikawa, M.N-.Gamo, K.Ishikawa, M.O.Watanabe, Y.Toyama, H.Iijima, K.Ito, J.Nakamura, and K.Kodate
  • Dielectric discontinuity at surfaces and interfaces: a first-principles approach
    International Conference on Nano Science and Technology (ICN+T 2008), Jul. 2008 (Colorad, USA)
    J.Nakamura, K-H.Sato, Y.Iwasaki, S.Wakui, and A.Natori
  • Polytype dependence of permittivity of SiC films
    14th International Conference on Solid Films and Surfaces (ICSFS-14), Jau. 2008 (Dublin, Ireland)
    J.Nakamura, K-H.Sato, Y.Iwasaki, S.Wakui, and A.Natori
  • Anomalous enhancement of the local dielectric constant near defects in SiO2
    14th International Conference on Solid Films and Surfaces (ICSFS-14), Jau. 2008 (Dublin, Ireland)
    M.Wakui, J.Nakamura, and A.Natori
  • First-principles calculations on STM images for subsurface dopants: tip-induced band-bending and dependence on dopant species
    14th International Conference on Solid Films and Surfaces (ICSFS-14), Jau. 2008 (Dublin, Ireland)
    M.Hirayama, J.Nakamura, and A.Natori
  • Atomic-scale friction of nanometer-sized contacts
    14th International Conference on Solid Films and Surfaces (ICSFS-14), Jau. 2008 (Dublin, Ireland)
    M.Igarashi, J.Nakamura, and A.Natori
  • Dielectric properties of the Interface between Si and SiO2
    35th Conference on the Physics and Chemistry of Semiconductor Interfaces, Jan. 2008 (Santa Fe, NM, USA)
    S.Wakui, J.Nakamura, and A.Natori
  • Dielectric properties of the Interface between Si and SiO2
    5th International Symposium on Control of Semiconductor Interfaces (ISCSI-5), Nov. 2007 (Hachioji, Japan)
    S.Wakui, J.Nakamura, and A.Natori
  • Nano-scale profile of the dielectric constant near the Si/Oxide interface: A first-principles approach (Invited Talk)
    212th Electrochemical society (ECS-212), Oct. 2007 (Washington DC, USA)
    J.Nakamura, S.Wakui, S.Eguchi, R.Yanai, and A.Natori
  • Structural bistability of the oxygen-adsorbed graphene sheet
    International Conference on Nano Science and Technology (ICN+T 2007), Sep. 2007 (Stockholm, Sweden)
    J.Nakamura, J.Ito, and A.Natori
  • First-principles calculations on STM images for subsurface dopants
    International Conference on Nano Science and Technology (ICN+T 2007), Sep. 2007 (Stockholm, Sweden)
    M.Hirayama, J.Nakamura and A.Natori
  • Mechanism of velocity saturation and lateral resonance in atomic-scale sliding friction
    International Conference on Nano Science and Technology (ICN+T 2007), Sep. 2007 (Stockholm, Sweden)
    M.Igarashi, J.Nakamura and A.Natori
  • ac conductivity and dielectric constant of conductor-insulator composites
    6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics (Polytronic 2006), Jan.2007 (Tokyo, Japan)
    Y.Koyama, T.B.Murtanto, J.Nakamura, and A.Natori
  • Mechanism of velocity saturation of atomic friction force and the dynamic superlubricity
    at torsional resonance
    The 14th International Colloquium on Scanning Probe Microscopy (ICSPM-14), Dec. 2006 (Atagawa, Japan)
    M.Igarashi, J.Nakamura and A.Natori
  • STM simulations for B- and P-doped Si(111) surfaces
    The 14th International Colloquium on Scanning Probe Microscopy (ICSPM-14), Dec. 2006 (Atagawa, Japan)
    H.Hirayama, J.Nakamura and A.Natori
  • First-principles calculation of electrostatic property of the interface : Ultra-thin-Al/Si(111)
    2006 International Workshop on Dielectric thin films for future ULSI devices - Science and Technology (IWDTF2006), Nov. 2006 (Kawasaki, Japan)
    T.Shimizu, K.Natori, J.Nakamura, and A.Natori
  • Dielectric properties of the interface between Si and SiO2
    2006 International Workshop on Dielectric thin films for future ULSI devices - Science and Technology (IWDTF2006), Nov. 2006 (Kawasaki, Japan)
    S.Wakui, J.Nakamura, and A.Natori
  • First-principles evaluations of dielectric properties from nano-scale points of view (Invited Talk)
    8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-8), Oct. 2006 (Shanghai, R.P.China)
    J.Nakamura, S.Wakui, and A.Natori
  • Charge correlation and spin coupling in double quantum dots
    28th International Conference on the Physics of Semiconductors (ICPS-28), July 2006 (Vienna, Austria)
    H.Masu, J.Nakamura, and A.Natori
  • Dielectric discontinuity at a twin boundary in Si(111)
    28th International Conference on the Physics of Semiconductors (ICPS-28), July 2006 (Vienna, Austria)
    J.Nakamura and A.Natori
  • First-principles evaluations of dielectric constants (Invited Talk)
    International Workshop on Nano CMOS, Jan. 2006 (Mishima, Japan)
    J.Nakamura, S.Wakui, and A.Natori
  • Dielectric discontinuity at a stacking fault in Si(111)
    33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-33), Jan. 2006 (Cocoa Beach, Florida, USA)
    J.Nakamura and A.Natori
  • First-principles calculations of dielectric constants for ultrathin SiO2 films
    33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-33), Jan. 2006 (Cocoa Beach, Florida, USA)
    S.Wakui, J.Nakamura, and A.Natori
  • Electronic and magnetic properties of BNC ribbons
    4-th International Symposium on Surface Science and Nanotechnology (ISSS-4), Nov. 2005 (Omiya, Japan)
    T.Nitta, J.Nakamura, and A.Natori
  • Atomic scale mechanism of friction
    4-th International Symposium on Surface Science and Nanotechnology (ISSS-4), Nov. 2005 (Omiya, Japan)
    S.Wakunami, J.Nakamura, and A.Natori
  • Dielectric properties for ultra-thin films of the polytypes of SiC
    4-th International Symposium on Surface Science and Nanotechnology (ISSS-4), Nov. 2005 (Omiya, Japan)
    J.Nakamura and A.Natori
  • Controlling the spin coupling in double quantum dots
    4-th International Symposium on Surface Science and Nanotechnology (ISSS-4), Nov. 2005 (Omiya, Japan)
    H.Masu, J.Nakamura, and A.Natori
  • Structural stabilities and electronic properties of planar Si compounds
    4-th International Symposium on Surface Science and Nanotechnology (ISSS-4), Nov. 2005 (Omiya, Japan)
    M.Hirayama, J.Nakamura, and A.Natori
  • First-principles calculations on adsorption and diffusion of oxygen atoms on graphene sheets
    4-th International Symposium on Surface Science and Nanotechnology (ISSS-4), Nov. 2005 (Omiya, Japan)
    J.Ito, J.Nakamura, and A.Natori
  • First-principles calculations of dielectric constants for ultrathin SiO2 films
    4-th International Symposium on Surface Science and Nanotechnology (ISSS-4), Nov. 2005 (Omiya, Japan)
    S.Wakui, J.Nakamura, and A.Natori
  • First-principles evaluations of dielectric constants for ultra-thin semiconducting films
    23-rd European Conference on Surface Science (ECOSS-23), Sep. 2005 (Berlin, Germany)
    J.Nakamura and A.Natori
  • Friction mechanism in atomic-scale
    23-rd European Conference on Surface Science (ECOSS-23), Sep. 2005 (Berlin, Germany)
    S.Wakunami, J.Nakamura, and A.Natori
  • Ga- and As-Rich Limit of Surface Reconstruction on GaAs(001)
    23-rd European Conference on Surface Science (ECOSS-23), Sep. 2005 (Berlin, Germany)
    A.Ohtake, P.Kocan, K.Seino, W.G.Schmidt, J.Nakamura, A.Natori, and N.Koguchi
  • Spatial variation in dielectric constant at surfaces of hydrogen-terminated ultra-thin Si(111) films
    The 8th International Conference on the Structure of Surfaces (ICSOS-8), Jul. 2005 (Munich, Germany)
    J.Nakamura and A.Natori
  • Electronic and magnetic properties of BNC ribbons
    The 8th International Conference on the Structure of Surfaces (ICSOS-8), Jul. 2005 (Munich, Germany)
    T.Nitta, J.Nakamura, and A.Natori
  • Two types of surface atomic structures for As-rich GaAs(001)-c(4x4)
    The 8th International Conference on the Structure of Surfaces (ICSOS-8), Jul. 2005 (Munich, Germany)
    A.Ohtake, P.Kocan, J.Nakamura, A.Natori, and N.Koguchi
  • Friction in atomic scale
    13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM05), Jul. 2005 (Sapporo, Japan)
    S.Wakunami, J.Nakamura, and A.Natori
  • Dielectric properties of ultra-thin SiC films
    The 32nd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-32), Jan. 2005 (Bozeman, Montana, USA)
    J.Nakamura, H.Ozawa, and A.Natori
  • Structural stability for Si(001) and Ge(001) in external electric fields
    The 12th International Colloquium on Scanning Probe Microscopy (ICSPM-12), Dec. 2005 (Atagawa, Japan)
    J.Nakamura and A.Natori
  • Energy barrier for dimer flipping at the Si(001)-2x1 surface in external electrostatic fields
    27th International Conference on the Physics of Semiconductors (ICPS-27), Jul.-Aug. 2004 (Flagstaff, Arizona, USA)
    J.Nakamura and A.Natori
  • Dielectric properties of ultra-thin films
    27th International Conference on the Physics of Semiconductors (ICPS-27), Jul.-Aug. 2004 (Flagstaff, Arizona, USA)
    J.Nakamura, S.Ishihara, H.Ozawa, and A.Natori
  • Atomic scale friction in magic size clusters
    IVC-16 (16th International Vacuum Congress), ICSS-12 (12th International Conference on Solid Surfaces), NANO-8 (8th International Conference on Nanometer-scale Science and Technology), Jun.-Jul. 2004 (Venice, Italy)
    K.Ohno, T.Nitta, J.Nakamura, and A.Natori
  • Energy barrier for dimer flipping at Si(001)-2x1 in external electric fields
    IVC-16 (16th International Vacuum Congress), ICSS-12 (12th International Conference on Solid Surfaces), NANO-8 (8th International Conference on Nanometer-scale Science and Technology), Jun.-Jul. 2004 (Venice, Italy)
    J.Nakamura and A.Natori
  • Dielectric properties of ultra-thin films
    IVC-16 (16th International Vacuum Congress), ICSS-12 (12th International Conference on Solid Surfaces), NANO-8 (8th International Conference on Nanometer-scale Science and Technology), Jun.-Jul. 2004 (Venice, Italy)
    J.Nakamura, S.Ishihara, H.Ozawa, and A.Natori
  • Energy barrier for dimer flipping at Si(001)-2x1 in external electric fields
    9th International Symposium on the Advanced Physical Fields (APF-9), Mar. 2004 (Tsukuba, Japan)
    J.Nakamura and A.Natori
  • In-situ observation of Au deposition processes on the InSb{111}A,B-(2x2) surfaces by HR-profile TEM
    International Symposium on the Creation of Novel Nanomaterials (ISCNN'04), Jan. 2004 (Osaka, Japan)
    S.P.Cho, J.Nakamura, N.Tanaka, and T.Osaka
  • Atomic scale friction of nano-clusters
    31st Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Jan. 2004 (Kailua-Kona, Hawaii, USA)
    K. Ohno, T. Nitta, J.Nakamura, and A.Natori
  • First-principles calculations of band discontinuity at ultrathin SiO2/Si(001) interfaces
    31st Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Jan. 2004 (Kailua-Kona, Hawaii, USA)
    J.Nakamura, M.Watarai, and A.Natori
  • Surface stress anisotropy of Ge/Si(113)-2x2
    31st Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Jan. 2004 (Kailua-Kona, Hawaii, USA)
    J.Nakamura, Z.Zhang, K.Sumitomo, H.Omi, T.Ogino, and A.Natori
  • Energy barrier for dimer flipping at the Si(001)- and Ge(001)-2x1 surfaces in external electric fields
    The 11th International Colloquim on Scanning Probe Microscopy (ICSPM-11), Dec. 2003 (Atagawa, Japan)
    J.Nakamura and A.Natori
  • Structural stability and stress anisotropy of the Ge/Si(113)-2x2 surface
    7th Inernational Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nov. 2003 (Nara, Japan)
    J.Nakamura, Z.Zhang, K.Sumitomo, H.Omi, T.Ogino, and A.Natori
  • Dielectric properties of ultra-thin films
    7th Inernational Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nov. 2003 (Nara, Japan)
    S.Ishihara, J.Nakamura, and A.Natori
  • First-principles study of the atomic and electronic structures of the Au/Si(111)-Alpha(Sqrt3xSqrt3) surface
    7th Inernational Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nov. 2003 (Nara, Japan)
    T.Kadohira, J.Nakamura, and S.Watanabe
  • Direct observation of Au deposition processes on the InSb{111}A,B-(2x2) surfaces
    1st International Symposium on Active Nano-Characterization and Technology, Nov. 2003 (Tsukuba, Japan)
    S.P.Cho, J.Nakamura, N.Tanaka, and T.Osaka
  • Theoretical investigation of the honeycomb structure of the Au/Si(111)-Alpha(Sqrt3xSqrt3) surface using first-principles calculations
    International Workshop on Smart Interconnects (IWSI), Nov. 2003 (Atami, Japan)
    T.Kadohira, J.Nakamura, and S. Watanabe
  • Ga-As dimer structure for the GaAs(001)-c(4x4) surface
    22-nd European Conference on Surface Science (ECOSS-22), Sep. 2003 (Praha, Czech Republic)
    A.Ohtake, J.Nakamura, N.Koguchi, and A.Natori
  • Energy barrier at ultrathin SiO2/Si(001) interfaces
    22-nd European Conference on Surface Science (ECOSS-22), Sep. 2003 (Praha, Czech Republic)
    M.Watarai, J.Nakamura, and A.Natori
  • Structural stability and anisotropic stress of the Ge/Si(113)-2x2 surfaces
    22-nd European Conference on Surface Science (ECOSS-22), Sep. 2003 (Praha, Czech Republic)
    J.Nakamura, Z.Zhang, K.Sumitomo, H.Omi, T.Ogino, and A.Natori
  • Anisotropic surface stress of Ge/Si(113)-2x2
    Dr. Rohrer's JSPS Award Workshop III and ISSP international workshop --- a role of physics for nano science and technology ---, February 2003 (Kashiwa, Japan)
    J.Nakamura, Z.Zhang, K.Sumitomo, H.Omi, T.Ogino, and A.Natori
  • Structural stability of the InSb(111)B-(3x3) surface
    International Conference on Solid Films and Surfaces (ICSFS-11), July 2002 (Marseille, France)
    T.Kadohira, T.Miura, J.Nakamura, A.Natori, and T.Osaka
  • Structural stability of the Ge/Si(113)-2x2 surface
    International Conference on Solid Films and Surfaces (ICSFS-11), July 2002 (Marseille, France)
    J.Nakamura, Z.Zhang, K.Sumitomo, H.Omi, T.Ogino, and A.Natori
  • Dynamics of c(4x2) phase-transition in Si(001) surfaces
    International Conference on Solid Films and Surfaces (ICSFS-11), July 2002 (Marseille, France)
    M.Osanai, A.Natori, J.Nakamura, H.Yasunaga
  • Atomic structure of Ge/Si(113)-2x2 reconstruction
    The 9th International Colloquium on Scanning Probe Microscopy and Asian SPM (4), Dec. 2001 (Atagawa, Japan)
    Z.Zhang, K.Sumitomo, J.Nakamura, H.Omi, A.Natori, and T.Ogino
  • STM images and fluctuation of surface atoms: A theoretical study on Si(111)Sqrt3xSqrt3-Ag surface
    The 8th International Colloquium on Scanning Probe Microscopy and Asian SPM (3), Dec. 2000 (Atagawa, Japan)
    Y.Nakamura, Y.Kondo, J.Nakamura, and S.Watanabe
  • Long-range molecular ordering in a strained C60 monolayer
    The First International Symposium on Nanoarchitectonics Using Suprainteractions (NASI-1), Nov. 2000 (Tsukuba, Japan)
    T.Nakayama, J.Onoe, J.Nakamura, K.Takeuchi, and M.Aono
  • Structural and Electronic Properties of Two-dimensional C60
    The First International Symposium on Nanoarchitectonics Using Suprainteractions (NASI-1), Nov. 2000 (Tsukuba, Japan)
    J.Nakamura, T.Nakayama, S.Watanabe, and M.Aono
  • Interface structural analysis using medium-energy coaxial impact-collision ion scattering spectroscopy (Invited)
    16-th International Conference on the Application of Accelerators in Research and Industry, Nov. 2000 (Texas, USA)
    H.Sone, T.Kobayashi, G.Dorenbos, J.Nakamura, M.Aono, and C.F.McConville
  • Theoretical study on the structural phase transition of Si(111)Sqrt3xSqrt3-Ag surface
    The International Symposium on Surface and Interface: Properties of Different Symmetry Crossing (ISSI-PDSC 2000), Oct. 2000 (Nagoya, Japan)
    Y.Nakamura, Y.Kondo, J.Nakamura, S.Watanabe
  • Electronic structure of the Si(111)-(4x1)In surface
    The International Symposium on Surface and Interface: Properties of Different Symmetry Crossing (ISSI-PDSC 2000), Oct. 2000 (Nagoya, Japan)
    J.Nakamura, S.Watanabe, and M.Aono
  • Structural ordering on Si(111)Sqrt3xSqrt3-Ag surface: Monte Carlo simulation based on first-principles calculations
    25th International Conference on the Physics of Semiconductors (ICPS-25), Sep. 2000 (Osaka, Japan)
    Y.Nakamura, Y.Kondo, J.Nakamura, and S.Watanabe
  • in-situ measurements of strain in the surface normal direction: InAs on GaAs(111)A
    19-th European Conference on Surface Science (ECOSS-19), Sep. 2000 (Madrid, Spain)
    A.Ohtake, J.Nakamura, M.Terauchi, F.Sato, M.Tanaka, and M.Ozeki
  • Structural stability and electronic states of gold nanowires
    19-th European Conference on Surface Science (ECOSS-19), Sep. 2000 (Madrid, Spain)
    J.Nakamura, N.Kobayashi, S.Watanabe, and M.Aono
  • Structural stability of the Si(111)-(Sqrt3xSqrt3)-Sn surface
    International Symposium on Surface Science for Micro- and Nano-Device Fabrication (ISSS-3), Nov. 1999 (Tokyo, Japan)
    T.Kado-hira, Y.Miura, J.Nakamura, M.Aono, and T.Osaka
  • Atomic and electronic structure of the Si(111)-Sqrt3xSqrt3-Ag surface:
    re-examined by using first-principles calculations
    International Symposium on Surface Science for Micro- and Nano-Device Fabrication (ISSS-3), Nov. 1999 (Tokyo, Japan)
    Y.Kondo, J.Nakamura, and S.Watanabe
  • Structure and electronic states for a double strand of Au atoms (Invited)
    24th Relativity Workshop: The Society for Discrete Variational Xa, Sep. 1999 (Kyoto)
    J.Nakamura
  • Photo-induced products in a C60 monolayer on Si(111)-Sqrt3xSqrt3-Ag: An STM study
    International Conference on the Structure of Surfaces (ICSOS-6), July 1999 ,
    (Vancouver, Canada)
    T.Nakayama, J.Onoe, K.Nakatsuji, J.Nakamura, K.Takeuchi, and M.Aono
  • Handling Adsorbed C60 on Surfaces by Irradiation of Photon
    RIKEN Conference on Molecular Design, Dec. 1998 (Zushi, Japan)
    T.Nakayama, J.Onoe, K.Nakatsuji, J.Nakamura, K.Takeuchi, and M.Aono
  • Chemical bonding features for faultily-stacked interfaces of GaAs{111}
    25th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-25), Jan. 1998 (Salt Lake City, Utah, USA)
    J.Nakamura, M.Masui, M.Sawayanagi, S.-P.Cho, T.Mishima, M.Nishizawa,
    T.Eguchi, and T.Osaka
  • Structural stability and its electronic origin of the GaAs(111)A-2x2 surface
    International Symposium on Surface Nano-Control of Environmental Catalysts
    and Related Materials, Nov. 1996ÅiTokyo, JapanÅj
    J.Nakamura, H.Nakajima, and T.Osaka

  (4) Domestic Conference
  
  			

  • See Japanese page

  
  

  (5) Award		

  • Young Scientist Awards
    (36th Conference on the Physics and Chemistry of Surfaces and Interfaces, Jan. 2009)
  • Marquis Who's Who in the World,2009
    (Aug. 2008)
  • Young Scientist Awards
    (35th Conference on the Physics and Chemistry of Semiconductor Interfaces, Jan. 2008)
  • Marquis Who's Who in the World 25th silver anniversary edition
    (Aug. 2007)
  • Young Scientist Awards
    (33rd Conference on the Physics and Chemistry of Semiconductor Interfaces, Jan. 2006)
  • Award for Encouragement of Research in Materials Science
    (The Materials Research Society of Japan, Dec. 2000)

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  Last modified: April 5, 2004